Plasmon excitation in MoS2/graphene van der waals heterostructures

被引:0
作者
Liu, Dan-Dan [1 ]
Zhang, Zhi-Yin [2 ]
Guo, Peng [1 ]
Wang, Jian-Jun [1 ]
机构
[1] Zhongyuan Univ Technol, Coll Sci, Zhengzhou 450007, Peoples R China
[2] ZhengZhou Shengda Univ Econ Business & Management, Inst Appl Math, Zhengzhou 451191, Peoples R China
来源
PRAMANA-JOURNAL OF PHYSICS | 2021年 / 96卷 / 01期
基金
中国国家自然科学基金;
关键词
Plasmon resonances; Van der Waals heterostructures; transition metal dichalcogenides; 73; 20; Mf; 21; -b; GRAPHENE; ELECTRONICS; TRANSPORT;
D O I
10.1007/s12043-021-02258-y
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have carried out a study of collective excitations for MoS2/graphene van der Waals heterostructures (vdWHs) using time-dependent density function theory (TDDFT). The resonance absorption spectra of the structures were analysed to determine the polarisation direction in the X-, Y- and Z-axes. We found that the resonance intensities in MoS2/graphene structures were larger than the bilayer graphene structures in high-energy resonance, and the resonance peak of the graphene/MoS2/graphene heterostructure almost annihilated at the low-energy resonance band became broadened at the high-energy resonance band. We studied Fourier-induced charge density of MoS2/graphene structures and found that they have dipole-like characteristics in the low-energy region.
引用
收藏
页数:9
相关论文
共 40 条
[1]   Plasmons on the edge of MoS2 nanostructures [J].
Andersen, Kirsten ;
Jacobsen, Karsten W. ;
Thygesen, Kristian S. .
PHYSICAL REVIEW B, 2014, 90 (16)
[2]   Plasmons in metallic monolayer and bilayer transition metal dichalcogenides [J].
Andersen, Kirsten ;
Thygesen, Kristian S. .
PHYSICAL REVIEW B, 2013, 88 (15)
[3]   The promise of plasmonics [J].
Atwater, Harry A. .
SCIENTIFIC AMERICAN, 2007, 296 (04) :56-63
[4]   Negative local resistance caused by viscous electron backflow in graphene [J].
Bandurin, D. A. ;
Torre, I. ;
Kumar, R. Krishna ;
Ben Shalom, M. ;
Tomadin, A. ;
Principi, A. ;
Auton, G. H. ;
Khestanova, E. ;
Novoselov, K. S. ;
Grigorieva, I. V. ;
Ponomarenko, L. A. ;
Geim, A. K. ;
Polini, M. .
SCIENCE, 2016, 351 (6277) :1055-1058
[5]   Low-Loss Plasmonic Metamaterials [J].
Boltasseva, Alexandra ;
Atwater, Harry A. .
SCIENCE, 2011, 331 (6015) :290-291
[6]  
Cui X, 2015, NAT NANOTECHNOL, V10, P534, DOI [10.1038/NNANO.2015.70, 10.1038/nnano.2015.70]
[7]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726
[8]   Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium [J].
Fang, Hui ;
Tosun, Mahmut ;
Seol, Gyungseon ;
Chang, Ting Chia ;
Takei, Kuniharu ;
Guo, Jing ;
Javey, Ali .
NANO LETTERS, 2013, 13 (05) :1991-1995
[9]   Plasmonics in graphene at infrared frequencies [J].
Jablan, Marinko ;
Buljan, Hrvoje ;
Soljacic, Marin .
PHYSICAL REVIEW B, 2009, 80 (24)
[10]   Graphene Plasmonics: A Platform for Strong Light-Matter Interactions [J].
Koppens, Frank H. L. ;
Chang, Darrick E. ;
Javier Garcia de Abajo, F. .
NANO LETTERS, 2011, 11 (08) :3370-3377