Low threshold current density 1.3 μm InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy

被引：6

作者：

Chang, FY

Lee, JD

Lin, HH

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 03期

关键词：

D O I：

10.1049/el:20040127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy are reported. The laser emits 1.296 mum light output and demonstrates a very low threshold current density of 111 A/cm(2). This is the lowest reported value of GaAs-based 1.3 mum quantum dot lasers with InGaP cladding layers.

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页码：179 / 180

页数：2

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