Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN

被引：28
作者：
Mair, RA [1 ]
Li, J [1 ]
Duan, SK [1 ]
Lin, JY [1 ]
Jiang, HX [1 ]
机构：
[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期
关键词：
D O I：
10.1063/1.123171
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-resolved photoluminescence (PL) spectroscopy has been used to study the radiative recombination of excitons bound to ionized donors in GaN doped with both Mg and Si at concentrations of 5x10(18)/cm(3) and 1.5x10(17)/cm(3) respectively. Low temperature (T similar to 10K) time-resolved, as well as integrated PL spectra, identify an ionized donor-bound (Si) exciton peak (D+X) approximately 11.5 meV below and a neutral acceptor-bound exciton (A(0)X) 20.5 meV below the free exciton peak. Rapid decay of the free exciton emission (less than or equal to 20 ps) implies that excitons are quickly captured by accepters and ionized donors. We find the (AOX) emission lifetime is consistent with previous measurements for GaN:Mg epilayers, while the (D+X) lifetime of 160 ps is longer than that of the well studied neutral donor-bound exciton ((DX)-X-0). The measured (D+X) lifetime, in comparison with ((DX)-X-0) and (A(0)X), suggests that the state is stable at low temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)03604-9].
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页码：513 / 515
页数：3
相关论文
共 15 条
[1]   Fundamental optical transitions in GaN [J].
Chen, GD ;
Smith, M ;
Lin, JY ;
Jiang, HX ;
Wei, SH ;
Khan, MA ;
Sun, CJ .
APPLIED PHYSICS LETTERS, 1996, 68 (20) :2784-2786
[2]  
Eckey L, 1996, APPL PHYS LETT, V68, P415, DOI 10.1063/1.116703
[3]  
Hopfield J. J., 1964, P INT C PHYS SEMICON, P725
[4]   LUMINESCENCE OF BE-DOPED AND MG-DOPED GAN [J].
ILEGEMS, M ;
DINGLE, R .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4234-4235
[5]   Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy [J].
Jayapalan, J ;
Skromme, BJ ;
Vaudo, RP ;
Phanse, VM .
APPLIED PHYSICS LETTERS, 1998, 73 (09) :1188-1190
[6]   LUMINESCENCE IN EPITAXIAL GAN-CD [J].
LAGERSTE.O ;
MONEMAR, B .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :2266-2272
[7]  
Nakamura Takashi Shuji, 1992, JPN J APPL PHYS PT 2, V31, pL139
[8]  
Rashba E. I., 1962, FIZ TVERD TELA, V4, P1029
[9]   Identification of an ionized-donor-bound-exciton transition in GaN [J].
Reynolds, DC ;
Look, DC ;
Jogai, B ;
Phanse, VM ;
Vaudo, RP .
SOLID STATE COMMUNICATIONS, 1997, 103 (09) :533-535
[10]  
Santic B, 1997, APPL PHYS LETT, V71, P1837, DOI 10.1063/1.119415
12