Common Emitter Current Gain > 1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base

被引：10

作者：

Gupta, Geetak ^{[1
]}

Ahmadi, Elaheh ^{[1
]}

Hestroffer, Karine ^{[1
]}

Acuna, Edwin ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 05期

基金：

美国国家科学基金会;

关键词：

GaN; hot electron transistors;

D O I：

10.1109/LED.2015.2416345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current gain is demonstrated in III-N hot electron transistors (HETs) for the first time using base current controlled common emitter characteristics. The emitter and collector barriers (phi(BE) and phi(BC)) are implemented using AlN and In0.1Ga0.9N layers as polarization-dipoles, respectively. The entire structure is grown by plasma-assisted molecular beam epitaxy. Current gain is observed when the base thickness is reduced from 13 to 7 nm. Ohmic contacts to the base 2-D electron gas (2DEG) are achieved using a BCl3/SF6 etch to remove the emitter and selectively stop on the AlN. Subsequent metallization results in a tunnel contact from the metal to the base 2DEG across the thin AlN layer. This dual purpose served by the AlN layer is shown to be critical for achieving scaled base and current gain in III-N HETs.

引用

页码：439 / 441

页数：3

共 7 条

[1] Current gain in sub-10nm base GaN tunneling hot electron transistors with AlN emitter barrier
Yang, Zhichao
Zhang, Yuewei
Nath, Digbijoy N.
Khurgin, Jacob B.
Rajan, Siddharth
APPLIED PHYSICS LETTERS, 2015, 106 (03)
[2] Establishment of design space for high current gain in III-N hot electron transistors
Gupta, Geetak
Ahmadi, Elaheh
Suntrup, Donald J., III
Mishra, Umesh K.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (01)
[3] Current gain above 10 in sub-10nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter
Yang, Zhichao
Zhang, Yuewei
Krishnamoorthy, Sriram
Nath, Digbijoy N.
Khurgin, Jacob B.
Rajan, Siddharth
APPLIED PHYSICS LETTERS, 2016, 108 (19)
[4] Current Gain above 10 in sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors with GaN/AlN Emitter
Yang, Zhichao
Zhang, Yuewei
Krishnamoorthy, Sriram
Nath, Digbijoy N.
Khurgin, Jacob B.
Rajan, Siddharth
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2016,
[5] Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors
Yang, Zhichao
Nath, Digbijoy N.
Zhang, Yuewei
Khurgin, Jacob B.
Rajan, Siddharth
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (05) : 436 - 438
[6] Design Space of III-N Hot Electron Transistors Using AlGaN and InGaN Polarization-Dipole Barriers
Gupta, Geetak
Laurent, Matthew
Li, Haoran
Suntrup, Donald J., III
Acuna, Edwin
Keller, Stacia
Mishra, Umesh K.
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (01) : 23 - 25
[7] High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
Makimoto, T
Kumakura, K
Kobayashi, N
APPLIED PHYSICS LETTERS, 2003, 83 (05) : 1035 - 1037

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Common Emitter Current Gain &gt; 1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base

Common Emitter Current Gain > 1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base