Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation

被引：12

作者：

Bae, Min Soo ^{[1
]}

Yun, Ilgu ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020年 / 35卷 / 03期

关键词：

junctionless FinFET; process variability; random dopant fluctuation; work function variation; oxide thickness variation; metal grain; impedance field method; THRESHOLD VOLTAGE VARIABILITY; ORIENTATION; TRANSISTORS;

D O I：

10.1088/1361-6641/ab6bfb

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM). Effects of doping concentration, gate metal grain-related parameters, and device parameter scaling on RDF, WFV, and OTV induced variability are studied using the standard deviations of threshold voltage (sigma(Vth)) and subthreshold slope (sigma(Ssub)). As a result, we find that a relatively low doping concentration helps alleviate process variability. As average grain size increases, different mechanisms of sigma(Vth) and sigma(Ssub) degradation are analyzed for WFV and OTV induced variability. Compared to WFV and OTV, RDF is revealed as the most significant source of variability as devices scale down. It is observed that fin width (W-fin) and oxide thickness (t(ox)) scaling leads to the reduction of RDF induced variability, whereas channel length (L) and fin height (H-fin) scaling results in aggravation of RDF, WFV, and OTV induced variability.

引用

页数：8

共 28 条

[1]

[Anonymous], 2015, 2015 SENT DEV US GUI

[2] Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions [J].

Bae, Min Soo ;

Yun, Ilgu .

SOLID-STATE ELECTRONICS, 2019, 156 :48-57

[3] Influence of the sputtering gas on the preferred orientation of nanocrystalline titanium nitride thin films [J].

Banerjee, R ;

Chandra, R ;

Ayyub, P .

THIN SOLID FILMS, 2002, 405 (1-2) :64-72

[4]

Colinge JP, 2008, INTEGR CIRCUIT SYST, P1, DOI 10.1007/978-0-387-71752-4_1

[5]

Colinge JP, 2010, NAT NANOTECHNOL, V5, P225, DOI [10.1038/NNANO.2010.15, 10.1038/nnano.2010.15]

[6]

Dadgour Hamed, 2008, 2008 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), P270, DOI 10.1109/ICCAD.2008.4681585

[7] Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors-Part I: Modeling, Analysis, and Experimental Validation [J].

Dadgour, Hamed F. ;

Endo, Kazuhiko ;

De, Vivek K. ;

Banerjee, Kaustav .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) :2504-2514

[8] Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs [J].

Gnudi, A. ;

Reggiani, S. ;

Gnani, E. ;

Baccarani, G. .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) :336-338

[9] Comparison of Logic Performance of CMOS Circuits Implemented With Junctionless and Inversion-Mode FinFETs [J].

Guin, Shilpi ;

Sil, Monali ;

Mallik, Abhijit .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) :953-959

[10]

Hisamoto D, 2000, IEEE T ELECTRON DEV, V47, P2320, DOI 10.1109/16.887014

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