Dislocation motion in silicon: the shuffle-glide controversy revisited

被引：38

作者：

Pizzagalli, L. ^{[1
]}

Beauchamp, P. ^{[1
]}

机构：

[1] Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, Chasseneuil, France

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2008年 / 88卷 / 06期

关键词：

dislocation; semiconductors; plasticity; shuffle-glide; silicon;

D O I：

10.1080/09500830802136222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Considering recently computed formation and migration energies of kinks on nondissociated dislocations, we have compared the relative mobilities of glide partial and shuffle perfect dislocations in silicon. We found that the latter should be more mobile over all the available stress range, invalidating the model of a stress driven transition between shuffle and glide dislocations. We discuss several hypotheses that may explain the experimental observations.

引用

页码：421 / 427

页数：7

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