Uniaxial Strain Engineering via Core Position Control in CdSe/CdS Core/Shell Nanorods and Their Optical Response

被引:20
作者
Kim, Dahin [1 ]
Shcherbakov-Wu, Wenbi [1 ,2 ]
Ha, Seung Kyun [1 ]
Lee, Woo Seok [1 ,3 ]
Tisdale, William A. [1 ]
机构
[1] MIT, Dept Chem Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Chem, Cambridge, MA 02139 USA
[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
基金
新加坡国家研究基金会;
关键词
dot-in-rod; core; shell nanostructure; core position; uniaxial strain; valence band splitting; piezoelectricity; phonon-assisted photoluminescence; EXCITON FINE-STRUCTURE; BAND-EDGE EXCITON; WAVE-FUNCTION; ROD NANOCRYSTALS; SEEDED GROWTH; SHELL; PHOTOLUMINESCENCE; EMISSION;
D O I
10.1021/acsnano.2c05427
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Anisotropic strain engineering has emerged as a powerful strategy for enhancing the optoelectronic performance of semiconductor nanocrystals. Here, we show that CdSe/CdS dot-in-rod structures offer a platform for fine-tuning the optical response of CdSe quantum dots through anisotropic strain. By controlling the spatial position of the CdSe core within a growing CdS nanorod shell, varying degrees of uniaxial strain can be introduced. Placing CdSe cores at the end of the CdS nanorod induces strong asymmetric compression along the c -axis of the wurtzite CdSe core, dramatically altering its absorption and emission character-istics, whereas CdSe cores located near the middle of the nanorod experience a comparatively weak uniaxial strain field. The change in absorption and emission spectra and dynamics for highly strained end -position CdSe/CdS nanorods is explained by (1) relative shifting of the valence band light hole and heavy hole levels and (2) introduction of a strong piezoelectric potential, which spatially separates the electron and hole wave functions. The ability to tune the degree of uniaxial strain through core position control in a nanorod structure creates opportunities for precisely modulating the electronic properties of CdSe nanocrystals while simultaneously taking advantage of dielectric and optical anisotropies intrinsic to 1D nanostructures.
引用
收藏
页码:14713 / 14722
页数:10
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