Potential causes of across field CD variation

被引:24
作者
Progler, C
Du, H
Wells, G
机构
来源
OPTICAL MICROLITHOGRAPHY X | 1997年 / 3051卷
关键词
lithography; modeling; linewidth control; aberrations; partial coherence; stray light;
D O I
10.1117/12.275986
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The variation in critical dimension (i.e., CD) as a function of exposure field position is an important error component in total linewidth control. In this paper, we describe methods for uncovering root causes of the across field CD variation in a lithographic projection system. For example, using a special reticle artifact we form images of the exposure system source distribution at various points in the lens field. These field dependent source distributions provide important clues into the variation of partial coherence, dose and numerical aperture around the exposure field. We also present a novel technique for inferring the residual projection lens aberration signature from CD measurements in photoresist. Tests to understand the role of stray light in across field CD variation are also investigated. Exposure system specifications consistent with small variation in across field CD are provided on the basis of these test vehicles.
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收藏
页码:660 / 671
页数:2
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