Large oscillating tunnel magnetoresistance in ferromagnetic graphene single tunnel junction

被引：48

作者：

Bai, Chunxu ^{[1
]}

Zhang, Xiangdong ^{[1
]}

机构：

[1] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China

来源：

PHYSICS LETTERS A | 2008年 / 372卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/j.physleta.2007.08.050

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spin-polarized transports of relativistic electrons through graphene-based ferromagnet/insulator/ferromagnet (FG/IG/FG) single junctions have been investigated theoretically. Large oscillating tunnel magnetoresistance (TMR) has been found in monolayer and bilayer FG/IG/FG junctions. The oscillating amplitudes of TMR do not decrease with the increase of the thickness and the height of barrier, in contrast to the exponential decay in conventional ferromagnet/insulator/ferromagnet single junction. The physical origin for such a phenomenon has also been analyzed. It is anticipated to apply such a phenomenon to design the spin-polarized electron device based on the graphene materials. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：725 / 729

页数：5

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