Large oscillating tunnel magnetoresistance in ferromagnetic graphene single tunnel junction

被引:48
作者
Bai, Chunxu [1 ]
Zhang, Xiangdong [1 ]
机构
[1] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1016/j.physleta.2007.08.050
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Spin-polarized transports of relativistic electrons through graphene-based ferromagnet/insulator/ferromagnet (FG/IG/FG) single junctions have been investigated theoretically. Large oscillating tunnel magnetoresistance (TMR) has been found in monolayer and bilayer FG/IG/FG junctions. The oscillating amplitudes of TMR do not decrease with the increase of the thickness and the height of barrier, in contrast to the exponential decay in conventional ferromagnet/insulator/ferromagnet single junction. The physical origin for such a phenomenon has also been analyzed. It is anticipated to apply such a phenomenon to design the spin-polarized electron device based on the graphene materials. (c) 2007 Elsevier B.V. All rights reserved.
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页码:725 / 729
页数:5
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