Modeling of a New SOI Bidirectional Bipolar Junction Transistor for Low-Loss Household Appliances

被引：8
|
作者：
Phung, Luong Viet [1 ]
Benboujema, Chawki [1 ]
Batut, Nathalie [1 ]
Quoirin, Jean-Baptiste [2 ]
Schellmanns, Ambroise [1 ]
Jaouen, Lionel [2 ]
Ventura, Laurent [1 ]
机构：
[1] Univ Tours, Lab Microelect Puissance, F-37071 Tours 2, France
[2] STMicroelectronics, F-37071 Tours 2, France
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 04期
关键词：
Base shielding; bidirectionality; bipolar transistor; current gain; design; reduced surface field (RESURF); simulation; silicon on insulator (SOI);
D O I：
10.1109/TED.2011.2108658
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new monolithic bidirectional bipolar junction transistor with full turn-off control is studied due to technology computer-aided tools. The structure is built on a symmetrical transistor using silicon-on-insulator technology, which functionality relies on reduced surface field and base shielding effects. These concepts allow high drift doping concentrations and a thin and/or lowly doped base. Such a structure is suitable for bidirectional household appliances within a confined environment where power dissipation is a critical parameter.
引用
收藏
页码：1164 / 1169
页数：6
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