Effect of the annealing process on electrical and optical properties of SnO2/Ag/SnO2 nanometric multilayer film

被引：41

作者：

Liu, Lingyun ^{[1
,2
]}

Ma, Shanshan ^{[1
]}

Wu, Hao ^{[1
]}

Zhu, Bo ^{[1
]}

Yang, Huimin ^{[1
]}

Tang, Jingjing ^{[1
]}

Zhao, Xiangyang ^{[1
]}

机构：

[1] SIPO, Patent Off, Patent Examinat Cooperat Ctr, Chengdu 610213, Sichuan, Peoples R China

[2] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China

来源：

MATERIALS LETTERS | 2015年 / 149卷

关键词：

SnO2/Ag/SnO2; Nano-multilayer; Energy band structure; Optical; Electrical properties; THIN-FILMS; TEMPERATURE; TRANSPARENT; GLASS;

D O I：

10.1016/j.matlet.2015.02.093

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The SnO2/Ag/SnO2 nano-multilayer structure has been designed and fabricated on quartz glass by magnetron sputtering and then annealed in air. The effect of annealing temperature on the structural, optical, and electrical properties of the SAS films was investigated. The SEM images and XRD patterns show that crystallinity of the samples was improved as a result of annealing. High-quality transparent conductive films with sheet resistance of 4.4 Omega/sq and maximum transmittance of 91% at 500 nm wavelength were obtained with an annealing temperature of 200 degrees C. The figure of merit of the SAS films annealed at 200 degrees C reached a maximum of 3.39 x 10(-2) Omega(-1). It is observed the allowed direct band gap decreases with increasing substrate temperature. These multilayer films can be used as transparent conductive electrodes in optoelectronic devices. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：43 / 46

页数：4

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