An accurate method for determining intrinsic optical absorption in indirect band gap semiconductors

被引：14
作者：
Grivickas, V [1 ]
机构：
[1] Royal Inst Technol, Dept Elect, Electrum 229, S-16440 Stockholm, Sweden
[2] Vilnius State Univ, Inst Mat Res & Appl Sci, LT-2054 Vilnius, Lithuania
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 08期
关键词：
semiconductors; optical properties; time-resolved optical spectroscopies;
D O I：
10.1016/S0038-1098(98)00413-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A straightforward technique is presented for measuring the absorption coefficient of band-to-band optical transitions in indirect band gap semiconductors. The technique is useful in any injection range and involves measurement of the depth-resolved free-carrier absorption throughout the instant gradient of photoexcited e-h pairs. Optical measurements are performed in the perpendicular geometry with a spatial resolution of a few microns. The experiments in crystalline Si and in 4H SiC for near band edge excitation reveal a high measurement accuracy. An application of the technique to an extraction of dynamic or rigid band gap narrowing is briefly discussed. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：561 / 566
页数：6
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