Compact silicon microring resonators with ultra-low propagation loss in the C band

被引:113
作者
Xiao, Shijun [1 ]
Khan, Maroof H. [1 ]
Shen, Hao [1 ]
Qi, Minghao [1 ]
机构
[1] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
关键词
D O I
10.1364/OE.15.014467
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The propagation loss in compact silicon microring resonators is optimized with varied ring widths as well as bending radii. At the telecom band of 1.53-1.57 mu m, we demonstrate as low as 3-4 dB/cm propagation losses in compact silicon microring resonators with a small bending radius of 5 mu m, corresponding to a high intrinsic quality factor of 200,000-300,000. The loss is reduced to 2-3 dB/cm for a larger bending radius of 10 mu m, and the intrinsic quality factor increases up to an ultrahigh value of 420,000. Slot-waveguide microring resonators with around 80% optical power confinement in the slot are also demonstrated with propagation losses as low as 1.3 +/- 0.2 dB/mm at 1.55 mu m band. These loss numbers are believed to be among the lowest ones ever achieved in silicon microring resonators with similar sizes. (C) 2007 Optical Society of America.
引用
收藏
页码:14467 / 14475
页数:9
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