共 14 条
Compact silicon microring resonators with ultra-low propagation loss in the C band
被引:113
作者:
Xiao, Shijun
[1
]
Khan, Maroof H.
[1
]
Shen, Hao
[1
]
Qi, Minghao
[1
]
机构:
[1] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
关键词:
D O I:
10.1364/OE.15.014467
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
The propagation loss in compact silicon microring resonators is optimized with varied ring widths as well as bending radii. At the telecom band of 1.53-1.57 mu m, we demonstrate as low as 3-4 dB/cm propagation losses in compact silicon microring resonators with a small bending radius of 5 mu m, corresponding to a high intrinsic quality factor of 200,000-300,000. The loss is reduced to 2-3 dB/cm for a larger bending radius of 10 mu m, and the intrinsic quality factor increases up to an ultrahigh value of 420,000. Slot-waveguide microring resonators with around 80% optical power confinement in the slot are also demonstrated with propagation losses as low as 1.3 +/- 0.2 dB/mm at 1.55 mu m band. These loss numbers are believed to be among the lowest ones ever achieved in silicon microring resonators with similar sizes. (C) 2007 Optical Society of America.
引用
收藏
页码:14467 / 14475
页数:9
相关论文