Modulation behaviors of surface plasmon coupled light-emitting diode

被引:32
作者
Lin, Chun-Han
Su, Chia-Ying
Zhu, Erwin
Yao, Yu-Feng
Hsieh, Chieh
Tu, Charng-Gan
Chen, Hao-Tsung
Kiang, Yean-Woei
Yang, C. C. [1 ]
机构
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan
关键词
GA-DOPED ZNO; TEMPERATURE-GROWN GAAS; RADIATING DIPOLE; EMISSION; EFFICIENCY; OUTPUT; ARRAYS; LAYERS; DEVICE; NM;
D O I
10.1364/OE.23.008150
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The modulation bandwidths of the light-emitting diodes (LEDs) of different mesa sizes with and without surface plasmon (SP) coupling effect are compared. Due to the significant increase of carrier decay rate, within the size range of LED square-mesa from 60 through 300 micron and the injected current-density range from 139 through 1667 A/cm(2), the SP coupling can lead to the enhancement of modulation bandwidth by 44-48%, independent of the variations of LED mesa size or injected current level. The enhancement ratios of modulation bandwidth of the samples with SP coupling with respect to those of the samples without SP coupling are lower than the corresponding ratios of the square-root of photoluminescence decay rate due to the increases of their RC time constants (the product of device resistance and capacitance). The increases of the RC time constants in the samples with SP coupling are attributed to the increases of their device resistance levels when the Ag nanoparticles and GaZnO dielectric interlayer are added to the LED surface for effectively inducing SP coupling. (C) 2015 Optical Society of America
引用
收藏
页码:8150 / 8161
页数:12
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