Study on the Characteristics for deep-sub-micron grooved-gate PMOSFET

被引：0
|
作者：
Ren, HX [1 ]
Yue, H [1 ]
机构：
[1] Xidian Univ, Inst Microelect, Xian 710071, Shaanxi, Peoples R China
来源：
2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 2000年
关键词：
grooved gate PMOSFET; deep-submicron; electrical characteristics;
D O I：
10.1109/HKEDM.2000.904234
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the hydrodynamic energy transport model, using the 2-dimensional device simulator MEDICI, the port electrical characteristics for grooved-gate PMOSFET are studied at first, and compared with that of counterpart conventional planar PMOSFET. Then the characteristics are explained in terms of interior physical parameters distribution.
引用
收藏
页码：138 / 141
页数：4
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