Combined In-Pixel Linear and Single-Photon Avalanche Diode Operation With Integrated Biasing for Wide-Dynamic-Range Optical Sensing

被引:22
|
作者
Ouh, Hyunkyu [1 ]
Shen, Boyu [1 ]
Johnston, Matthew L. [1 ]
机构
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
基金
美国国家科学基金会;
关键词
Photodiodes; Optical sensors; Optical imaging; Optical variables measurement; Biomedical optical imaging; Detectors; Complementary metal-oxide-semiconductor (CMOS); high-voltage charge pump; image sensors; optical sensors; photodiode; single-photon avalanche diode (SPAD); wide dynamic range (DR); CMOS IMAGE SENSOR; READ NOISE; ON-CHIP; PERFORMANCE; CIRCUIT;
D O I
10.1109/JSSC.2019.2944856
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents a fully integrated, wide linear dynamic range (DR) optical sensor array combining linear and single-photon avalanche diode (SPAD) operation within each pixel. A pulse-counting readout scheme provides in-pixel digitization in an area-efficient manner for both the operation modes, enabling fully parallel measurement across the array. The proposed dual-mode optical sensor array alternately requires high-voltage (10-20 V) and low-voltage supply (2-5 V) for reverse bias of the photodiodes, which is provided by a reconfigurable, closed-loop high-voltage charge pump in the same substrate. An $8\times 8$ array architecture along with the dual-mode bias generator is fabricated in a general purpose 180-nm CMOS process and demonstrates 129-dB DR while maintaining linear photoresponse operating with a dual-mode frame rate of 20 Hz. We present a pixel design methodology for implementing a dual-mode optical sensor scalable to an array format, as well as high-voltage dc-dc conversion in a low-voltage CMOS process.
引用
收藏
页码:392 / 403
页数:12
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