Analysis of temperature in phase change memory scaling

被引：40
作者：
Kim, SangBum [1 ]
Philip, H.-S.
机构：
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 08期
关键词：
constant-voltage scaling; electrothermal modeling; ovonic unified memory (OUM); phase change memory (PCM; phase change random access memory; PRAM); proximity disturbance; thermal disturbance;
D O I：
10.1109/LED.2007.901347
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We analyze constant-voltage isotropic and nonisotropic scaling issues for phase change memory (PCM) based on electrothermal physics. Various analytical and simulation models of general and typical PCM cells that support the analysis is also provided. The analysis shows that the maximum temperature in the PCM cell, which is a key parameter for PCM operation, is independent of geometrical sizes and depends only on the voltage and material properties. This leads to the minimum programming voltage concept, which is determined by material properties of the phase change material.
引用
收藏
页码：697 / 699
页数：3
相关论文
共 13 条
[1]  
[Anonymous], 2001, INT EL DEV M, DOI [10.1109/IEDM.2001.979636, DOI 10.1109/IEDM.2001.979636]
[2]  
Bez R., 2006, 21st Non-Volatile Semiconductor Memory Workshop. (IEEE Cat. No. 06EX1246), P12, DOI 10.1109/.2006.1629475
[3]   Minimal phase-change marks produced in amorphous Ge2Sb2Te5 films [J].
Gotoh, T ;
Sugawara, K ;
Tanaka, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B) :L818-L821
[4]  
Incropera F., 2001, FUNDAMENTALS HEAT MA, V5th
[5]  
KIM S, 2006, P 21 NVSMW, P92
[6]  
Kim YT, 2003, 2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, P211
[7]   Physics and performance of phase change memories [J].
Lacaita, AL .
SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2005, :267-270
[8]  
LAI S, 2003, IEDM TECH DIG
[9]   Low-cost and nanoscale non-volatile memory concept for future silicon chips [J].
Lankhorst, MHR ;
Ketelaars, BWSMM ;
Wolters, RAM .
NATURE MATERIALS, 2005, 4 (04) :347-352
[10]   Thermal conductivity of phase-change material Ge2Sb2Te5 [J].
Lyeo, Ho-Ki ;
Cahill, David G. ;
Lee, Bong-Sub ;
Abelson, John R. ;
Kwon, Min-Ho ;
Kim, Ki-Bum ;
Bishop, Stephen G. ;
Cheong, Byung-ki .
APPLIED PHYSICS LETTERS, 2006, 89 (15)
12