Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN

被引：3
作者：
Iwaya, M
Takanami, S
Miyazaki, A
Kawashima, T
Iida, K
Kamiyama, S
Amano, H
Akasaki, I
机构：
[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 200卷 / 01期
关键词：
D O I：
10.1002/pssa.200303504
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We demonstrated a UV-light-emitting diode on low-dislocation-density AlGaN. To improve the performance of the UV-LED, we modified the Ti/Au pad form of the UV-LED. The output power of the new LED is approximately 25% higher than that of the conventional LED. Moreover, the decrease in operating voltage is attributed to the spread injection current. This new UV-light-emitting diode shows a peak wavelength of 363 nm and an output power of 4.7 mW at 100 mA DC current injection.
引用
收藏
页码：110 / 113
页数：4
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