A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode

被引：35
作者：
Yang, Jing [1 ]
Zhao, Degang [1 ,2 ]
Liu, Zongshun [1 ]
Liang, Feng [1 ]
Chen, Ping [1 ]
Duan, Lihong [1 ]
Wang, Hai [1 ]
Shi, Yongsheng [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2022年 / 43卷 / 01期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1088/1674-4926/43/1/010501
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
[No abstract available]
引用
收藏
页数：3
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