A high-speed thermal imaging system for semiconductor device analysis

被引：13
作者：
Hefner, A [1 ]
Berning, D [1 ]
Blackburn, D [1 ]
Chapuy, C [1 ]
Bouché, S [1 ]
机构：
[1] NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA
来源：
SEVENTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2001 | 2001年
关键词：
D O I：
10.1109/STHERM.2001.915143
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a semiconductor chip with 1-mus time, and 15-mum spatial resolution. The system uses virtual instrument graphical user interface software that controls an infrared thermal microscope, translation stages, digitizing oscilloscope, and a device test fixture temperature controller. The computer interface consists of a front panel for viewing the temperature distribution and includes a movie play-back feature that enables viewing of the temperature distribution versus time. The computer user interface also has a sub-panel for emissivity mapping and calibration of the infrared detector. The utility of the system is demonstrated in this paper using a bipolar transistor hotspot current constriction process.
引用
收藏
页码：43 / 49
页数：7
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