Electronic Transport in Heterostructures of Chemical Vapor Deposited Graphene and Hexagonal Boron Nitride

被引：14

作者：

Qi, Zhengqing John ^{[1
]}

Hong, Sung Ju ^{[2
]}

Rodriguez-Manzo, Julio A. ^{[1
]}

Kybert, Nicholas J. ^{[1
]}

Gudibande, Rajatesh ^{[3
]}

Drndic, Marija ^{[1
]}

Park, Yung Woo ^{[2
]}

Johnson, A. T. Charlie ^{[1
]}

机构：

[1] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[3] Univ Penn, Nano Bio Interface Ctr, Philadelphia, PA 19104 USA

来源：

SMALL | 2015年 / 11卷 / 12期

基金：

美国国家科学基金会;

关键词：

WAFER-SCALE; THERMAL-CONDUCTIVITY; EPITAXIAL GRAPHENE; ATOMIC-STRUCTURE; LAYER GRAPHENE; GROWTH; OXIDATION; MOBILITY; LIMITS;

D O I：

10.1002/smll.201402543

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO2. An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five-layer CVD hBN. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1402 / 1408

页数：7

共 52 条

[1] Screening effect and impurity scattering in monolayer graphene [J].

Ando, Tsuneya .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (07)

[2] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[3]

Balandin AA, 2011, NAT MATER, V10, P569, DOI [10.1038/nmat3064, 10.1038/NMAT3064]

[4] Graphene at High Bias: Cracking, Layer by Layer Sublimation, and Fusing [J].

Barreiro, A. ;

Boerrnert, F. ;

Ruemmeli, M. H. ;

Buechner, B. ;

Vandersypen, L. M. K. .

NANO LETTERS, 2012, 12 (04) :1873-1878

[5] Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition [J].

Behnam, Ashkan ;

Lyons, Austin S. ;

Bae, Myung-Ho ;

Chow, Edmond K. ;

Islam, Sharnali ;

Neumann, Christopher M. ;

Pop, Eric .

NANO LETTERS, 2012, 12 (09) :4424-4430

[6] Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst [J].

Bhaviripudi, Sreekar ;

Jia, Xiaoting ;

Dresselhaus, Mildred S. ;

Kong, Jing .

NANO LETTERS, 2010, 10 (10) :4128-4133

[7] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[8] Temperature-dependent transport in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Hone, J. ;

Stormer, H. L. ;

Kim, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (09)

[9] Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices [J].

Bresnehan, Michael S. ;

Hollander, Matthew J. ;

Wetherington, Maxwell ;

LaBella, Michael ;

Trumbull, Kathleen A. ;

Cavalero, Randal ;

Snyder, David W. ;

Robinson, Joshua A. .

ACS NANO, 2012, 6 (06) :5234-5241

[10] Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers [J].

Britnell, Liam ;

Gorbachev, Roman V. ;

Jalil, Rashid ;

Belle, Branson D. ;

Schedin, Fred ;

Katsnelson, Mikhail I. ;

Eaves, Laurence ;

Morozov, Sergey V. ;

Mayorov, Alexander S. ;

Peres, Nuno M. R. ;

Castro Neto, Antonio H. ;

Leist, Jon ;

Geim, Andre K. ;

Ponomarenko, Leonid A. ;

Novoselov, Kostya S. .

NANO LETTERS, 2012, 12 (03) :1707-1710

← 1 2 3 4 5 6 →