Structural, optical and electrical properties of Cu2FeSnX4 (X = S, Se) thin films prepared by chemical spray pyrolysis

被引：59

作者：

Khadka, Dhruba B. ^{[1
]}

Kim, JunHo ^{[1
]}

机构：

[1] Incheon Natl Univ, Dept Phys, Inchon 406772, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 638卷

基金：

新加坡国家研究基金会;

关键词：

Cu2FeSnS(Se)(4); Stannite; Spray pyrolysis; Photovoltaics; BAND-GAP; SOLVOTHERMAL SYNTHESIS; RAMAN-SPECTRA; CHALCOGENIDE; NANOCRYSTALS; CU2ZNSNSE4; DEPOSITION;

D O I：

10.1016/j.jallcom.2015.03.053

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on fabrication of polycrystalline Cu2FeSnX4 (X = S, Se) thin films by chemical spray pyrolysis subsequent with post-sulfurization and selenization. The post-annealing of as-sprayed Cu2FeSnS4 (CFTS) films in sulfur and selenium ambient demonstrated drastically improved surface texture as well as crystallinity. The crystal lattice parameters calculated from X-ray diffraction patterns for post-annealed films were found to be consistent with stannite structure. The fabricated Cu2FeSnS4 (CFTS) and Cu2FeSnSe4 (CFTSe) films showed p-type conductivity with carrier concentration in the range of 10(21) cm(-3) and mobility similar to 1-5 cm(2) V-1 s(-1). The band gap energies of post-sulfurized CFTS and post-selenized CFTSe films were estimated to be similar to 1.37 eV and similar to 1.11 eV with an error of similar to 0.02 eV by UV-Vis absorption, respectively, which are promising for photovoltaic application. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：103 / 108

页数：6

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