Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices

被引：14

作者：

Cai, Yuefei ^{[1
]}

Gong, Yipin ^{[1
]}

Bai, Jie ^{[1
]}

Yu, Xiang ^{[1
]}

Zhu, Chenqi ^{[1
]}

Esendag, Volkan ^{[1
]}

Lee, Kean Boon ^{[1
]}

Wang, Tao ^{[1
]}

机构：

[1] Univ Sheffield, Sheffield S1 3JD, S Yorkshire, England

来源：

IEEE PHOTONICS JOURNAL | 2018年 / 10卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

Green; HEMT-LED; light emitters; EMITTING-DIODES;

D O I：

10.1109/JPHOT.2018.2867821

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by a ring-shaped LED and two devices are seamlessly interconnected by the LED's n-GaN layer and the HEMT's two-dimensional electron gas (2DEG) channel. By adopting such a novel circular layout design, the green HEMT-LED shows a controllable and uniform green light emission at 507 nm by simply tuning its gate voltage. This enables a uniform, controllable green LED light source, serving as an essential element in the red-green-blue (RGB) LED solution for a wide range of applications, such as tunable-spectrum white LED illumination, multichannel visible light communication with wavelength division multiplexing, RGB-based full-color LED displays, and optogenetics.

引用

页数：7

共 18 条

[1] High luminous efficacy green light-emitting diodes with AlGaN cap layer [J].

Alhassan, Abdullah I. ;

Farrell, Robert M. ;

Saifaddin, Burhan ;

Mughal, Asad ;

Wu, Feng ;

Denbaars, Steven P. ;

Nakamura, Shuji ;

Speck, James S. .

OPTICS EXPRESS, 2016, 24 (16) :17868-17873

[2] Adaptive Receiver for Indoor Visible Light Communications [J].

Biagi, Mauro ;

Borogovac, Tarik ;

Little, Thomas D. C. .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2013, 31 (23) :3676-3686

[3] Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters [J].

Cai, Yuefei ;

Zou, Xinbo ;

Liu, Chao ;

Lau, Kei May .

IEEE ELECTRON DEVICE LETTERS, 2018, 39 (02) :224-227

[4] Optimization of electrode structure for flip-chip HVLED via two-level metallization [J].

Cai, Yuefei ;

Zou, Xinbo ;

Chong, Wing Cheung ;

Lau, Kei May .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (05) :1199-1203

[5] 3.4 Gbit/s visible optical wireless transmission based on RGB LED [J].

Cossu, G. ;

Khalid, A. M. ;

Choudhury, P. ;

Corsini, R. ;

Ciaramella, E. .

OPTICS EXPRESS, 2012, 20 (26) :B501-B506

[6]

Darwish AM, 2013, IEEE MTT S INT MICR

[7] III-Nitride full-scale high-resolution microdisplays [J].

Day, Jacob ;

Li, J. ;

Lie, D. Y. C. ;

Bradford, Charles ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2011, 99 (03)

[8] Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures [J].

Gong, Y. P. ;

Xing, K. ;

Wang, T. .

APPLIED PHYSICS LETTERS, 2011, 99 (17)

[9]

Grubor J., 2007, Proceedings of the 33rd European Conference and Exhibition of Optical Communications, P1

[10] Making Sense of Optogenetics [J].

Guru, Akash ;

Post, Ryan J. ;

Ho, Yi-Yun ;

Warden, Melissa R. .

INTERNATIONAL JOURNAL OF NEUROPSYCHOPHARMACOLOGY, 2015, 18 (11)

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