A Surface Potential based Model For GaN HEMTs

被引：0

作者：

Agnihotri, Shantanu ^{[1
]}

Ghosh, Sudip ^{[1
]}

Dasgupta, Avirup ^{[1
]}

Chauhan, Yogesh Singh ^{[1
]}

Khandelwal, Sourabh ^{[2
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

2013 IEEE ASIA PACIFIC CONFERENCE ON POSTGRADUATE RESEARCH IN MICROELECTRONICS & ELECTRONICS (PRIMEASIA) | 2013年

关键词：

GaN HEMT; Compact Model; Surface Potential; Benchmark Tests;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work a surface potential based compact model is presented for GaN material based High Electron Mobility Transistors. We have developed model for charges, drain current and gd (output conductance) which is surface potential based and physically accurate. Our model has shown excellent agreement with experimental data for drain current and gd. This model is capable of showing correct physical behavior and is robust which can be observed through various benchmark tests, such as AC symmetry test, DC symmetry test and self-heating test. We have used Agilent ICCAP, ADS and Synopsys Hspice for our simulations.

引用

页码：175 / 179

页数：5

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