Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

被引：17
|
作者：
Sharma, A. [1 ]
Janssen, N. M. A. [1 ]
Mathijssen, S. G. J. [1 ,2 ]
de Leeuw, D. M. [2 ]
Kemerink, M. [1 ]
Bobbert, P. A. [1 ]
机构：
[1] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands
[2] Philips Res Labs Eindhoven, NL-5656 AE Eindhoven, Netherlands
来源：
PHYSICAL REVIEW B | 2011年 / 83卷 / 12期
关键词：
THRESHOLD VOLTAGE SHIFTS;
D O I：
10.1103/PhysRevB.83.125310
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced.
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页数：4
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