Topological Anderson insulator in electric circuits

被引:62
作者
Zhang, Zhi-Qiang [1 ]
Wu, Bing-Lan [1 ]
Song, Juntao [2 ,3 ]
Jiang, Hua [1 ,4 ]
机构
[1] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China
[2] Hebei Normal Univ, Coll Phys, Shijiazhuang 050024, Hebei, Peoples R China
[3] Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050024, Hebei, Peoples R China
[4] Soochow Univ, Inst Adv Study, Suzhou 215006, Peoples R China
关键词
REALIZATION; MODEL;
D O I
10.1103/PhysRevB.100.184202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we investigate the realization of topological Anderson insulators in electric circuits. A disordered Haldane model is constructed through electric circuit networks composed of capacitors and inductors, where the disorder is introduced through the random induction of the grounding inductors. Based on the noncommutative geometry method and transport calculations, we confirm that such kind of disorder can drive a phase transition from a normal insulator to a topological Anderson insulator. Besides, such a disorder also possesses unique characteristics which are absent for the usual Anderson disorder. Therefore distinct features are exhibited by the topological Anderson transition in electric circuits. Finally, the topological Anderson insulator in circuits holds additional advantages for microelectronic technology that can be easily detected by measuring the quantized transmission coefficients and the edge state wave functions.
引用
收藏
页数:12
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