Interlayer interactions in 2D WS2/MoS2 heterostructures monolithically grown by in situ physical vapor deposition

被引：71

作者：

Yang, Weifeng ^{[1
]}

Kawai, Hiroyo ^{[1
]}

Bosman, Michel ^{[1
,2
]}

Tang, Baoshan ^{[2
]}

Chai, Jianwei ^{[1
]}

Tay, Wei Le ^{[2
]}

Yang, Jing ^{[1
]}

Seng, Hwee Leng ^{[1
]}

Zhu, Huili ^{[3
]}

Gong, Hao ^{[1
]}

Liu, Hongfei ^{[1
]}

Goh, Kuan Eng Johnson ^{[1
]}

Wang, Shijie ^{[1
]}

Chi, Dongzhi ^{[1
]}

机构：

[1] ASTAR, Inst Mat Res & Engn, Singapore 138634, Singapore

[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore

[3] Jimei Univ, Sch Sci, Dept Phys, Xiamen 361021, Peoples R China

来源：

NANOSCALE | 2018年 / 10卷 / 48期

关键词：

TOTAL-ENERGY CALCULATIONS; ACTIVE EDGE SITES; EPITAXIAL-GROWTH; BAND-STRUCTURE; MOS2; MONOLAYER; GRAPHENE; HETEROJUNCTIONS; OFFSETS; OXIDES;

D O I：

10.1039/c8nr07498d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The understanding of the interlayer interactions in vertical heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is essential to exploit their advanced functions for next-generation optoelectronics and electronics. Here we demonstrate a monolithic stacking of TMDC heterostructures with 2D MoS2 and WS2 layers via in situ physical vapor deposition. We find that the kinetically sputtered atoms are able to overcome the interlayer van der Waals forces between the vertical layers, leading to a substantial number of randomly oriented stacks with various twist angles. Our X-ray photoelectron spectroscopy results reveal a type II heterojunction for 2D WS2/MoS2, showing a band alignment with a conduction band offset of 0.41 eV and a valence band offset of 0.25 eV. In particular, we observed a remarkable interlayer coupling and associated exciton relaxation at the hetero-interface due to the misoriented stacks. By analyzing the band structures and charge densities of the vertical stacks using first-principles calculations, we reveal that the interlayer coupling is a function of the interlayer distance and is relatively insensitive to the angle of misorientation.

引用

页码：22927 / 22936

页数：10

共 58 条

[1] Heterostructures of transition metal dichalcogenides [J].

Amin, B. ;

Singh, N. ;

Schwingenschloegl, U. .

PHYSICAL REVIEW B, 2015, 92 (07)

[2] PROJECTOR AUGMENTED-WAVE METHOD [J].

BLOCHL, PE .

PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979

[3] Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films [J].

Britnell, L. ;

Ribeiro, R. M. ;

Eckmann, A. ;

Jalil, R. ;

Belle, B. D. ;

Mishchenko, A. ;

Kim, Y. -J. ;

Gorbachev, R. V. ;

Georgiou, T. ;

Morozov, S. V. ;

Grigorenko, A. N. ;

Geim, A. K. ;

Casiraghi, C. ;

Castro Neto, A. H. ;

Novoselov, K. S. .

SCIENCE, 2013, 340 (6138) :1311-1314

[4] Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces [J].

Bussolotti, Fabio ;

Chai, Jainwei ;

Yang, Ming ;

Kawai, Hiroyo ;

Zhang, Zheng ;

Wang, Shijie ;

Wong, Swee Liang ;

Manzano, Carlos ;

Huang, Yuli ;

Chi, Dongzhi ;

Goh, Kuan Eng Johnson .

RSC ADVANCES, 2018, 8 (14) :7744-7752

[5] Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates [J].

Chiam, S. Y. ;

Chim, W. K. ;

Pi, C. ;

Huan, A. C. H. ;

Wang, S. J. ;

Pan, J. S. ;

Turner, S. ;

Zhang, J. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (08)

[6] Determination of band alignment in the single-layer MoS2/WSe2 heterojunction [J].

Chiu, Ming-Hui ;

Zhang, Chendong ;

Shiu, Hung-Wei ;

Chuu, Chih-Piao ;

Chen, Chang-Hsiao ;

Chang, Chih-Yuan S. ;

Chen, Chia-Hao ;

Chou, Mei-Yin ;

Shih, Chih-Kang ;

Li, Lain-Jong .

NATURE COMMUNICATIONS, 2015, 6

[7] Spectroscopic Signatures for Interlayer Coupling in MoS2-WSe2 van der Waals Stacking [J].

Chiu, Ming-Hui ;

Li, Ming-Yang ;

Zhang, Wengjing ;

Hsu, Wei-Ting ;

Chang, Wen-Hao ;

Terrones, Mauricio ;

Terrones, Humberto ;

Li, Lain-Jong .

ACS NANO, 2014, 8 (09) :9649-9656

[8]

Cui X, 2015, NAT NANOTECHNOL, V10, P534, DOI [10.1038/nnano.2015.70, 10.1038/NNANO.2015.70]

[9] Electronic structure of two-dimensional transition metal dichalcogenide bilayers from ab initio theory [J].

Debbichi, L. ;

Eriksson, O. ;

Lebegue, S. .

PHYSICAL REVIEW B, 2014, 89 (20)

[10]

Duan XD, 2014, NAT NANOTECHNOL, V9, P1024, DOI [10.1038/nnano.2014.222, 10.1038/NNANO.2014.222]

← 1 2 3 4 5 6 →