Mid-Wavelength InAsSb Detectors Based on nBn Design

被引：20

作者：

Khoshakhlagh, A. ^{[1
]}

Myers, S. ^{[1
]}

Plis, E. ^{[1
]}

Kutty, M. N. ^{[1
]}

Klein, B. ^{[1
]}

Gautam, N. ^{[1
]}

Kim, H. ^{[1
]}

Smith, E. P. G. ^{[2
]}

Rhiger, D. ^{[2
]}

Johnson, S. M. ^{[2
]}

Krishna, S. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA

[2] Raytheon Vis Syst, Goleta, CA 93117 USA

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2 | 2010年 / 7660卷

关键词：

InAsSb detector; nBn detector; mid-wave infrared detectors;

D O I：

10.1117/12.850428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of InAsSb detectors based on the nBn design for the mid-wave infrared (MWIR) spectral region is discussed. Comparisons of optical and electrical properties of InAsSb photodetectors with two different barrier material, namely, AlAs0.15Sb0.75 (structure A) and AlAs0.10Sb0.9 (structure B) are reported. The dark current density in the AlAs0.15Sb0.85 is lower possibly due to the larger valence band offset. Clear room temperature spectral responses is observed and a specific detectivity (D*) of 1.4x10(12) and 1.01x10(12) cmHz(1/2)/W at 0.2 V, and a responsivity of 0.87 and 1.66 A/W under 0.2 V biasing at 77 K and 3.5 mu m, assuming unity gain, was obtained for structures A and B, respectively.

引用

页数：7

共 9 条

[1] Bias dependent dual band response from InAs/Ga(In)Sb type II strain layer superlattice detectors [J].

Khoshakhlagh, A. ;

Rodriguez, J. B. ;

Plis, E. ;

Bishop, G. D. ;

Sharma, Y. D. ;

Kim, H. S. ;

Dawson, L. R. ;

Krishna, S. .

APPLIED PHYSICS LETTERS, 2007, 91 (26)

[2] Mid-IR focal plane array based on type-II InAs/GaSb strain layer superlattice detector with nBn design [J].

Kim, H. S. ;

Plis, E. ;

Rodriguez, J. B. ;

Bishop, G. D. ;

Sharma, Y. D. ;

Dawson, L. R. ;

Krishna, S. ;

Bundas, J. ;

Cook, R. ;

Burrows, D. ;

Dennis, R. ;

Patnaude, K. ;

Reisinger, A. ;

Sundaram, M. .

APPLIED PHYSICS LETTERS, 2008, 92 (18)

[3] Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization [J].

Little, J. W. ;

Svensson, S. P. ;

Beck, W. A. ;

Goldberg, A. C. ;

Kennerly, S. W. ;

Hongsmatip, T. ;

Winn, M. ;

Uppal, P. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (04)

[4] nBn detector, an infrared detector with reduced dark current and higher operating temperature [J].

Maimon, S. ;

Wicks, G. W. .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[5] Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors [J].

Plis, E. ;

Kim, H. S. ;

Bishop, G. ;

Krishna, S. ;

Banerjee, K. ;

Ghosh, S. .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[6] nBn structure based on InAs/GaSb type-II strained layer superlattices [J].

Rodriguez, J. B. ;

Plis, E. ;

Bishop, G. ;

Sharma, Y. D. ;

Kim, H. ;

Dawson, L. R. ;

Krishna, S. .

APPLIED PHYSICS LETTERS, 2007, 91 (04)

[7] INAS1-XSBX INFRARED DETECTORS [J].

ROGALSKI, A .

PROGRESS IN QUANTUM ELECTRONICS, 1989, 13 (03) :191-231

[8] Room-temperature InAsSb photovoltaic detectors for mid-infrared applications [J].

Shao, H. ;

Li, W. ;

Torfi, A. ;

Moscicka, D. ;

Wang, W. I. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (13-16) :1756-1758

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