Buried channel MOSFET DC SPICE modeling using surface channel models

被引：0
作者：
Kulas, M [1 ]
Nathan, A [1 ]
Weale, G [1 ]
机构：
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
来源：
UNIVERSITY AND INDUSTRY - PARTNERS IN SUCCESS, CONFERENCE PROCEEDINGS VOLS 1-2 | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we review the various methods available for modeling DC behaviour of buried channel metal oxide semiconductor transistors in SPICE. A surface channel model is used to predict the buried channel device DC behaviour, and an equivalent circuit using the fitted surface channel model is presented.
引用
收藏
页码：445 / 448
页数：4
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