Electrical switching of photoluminescence of single site-controlled InAs quantum dots

被引：0
|
作者：
Schramm, A. [1 ]
Koski, E. [2 ]
Kontio, J. M. [2 ]
Tommila, J. [1 ]
Hakkarainen, T. V. [1 ]
Lupo, D. [2 ]
Guina, M. [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, POB 692, FIN-33101 Tampere, Finland
[2] Tampere Univ Technol, Dept Elect & Commun Engn, POB 692, FIN-33101 Tampere, Finland
来源：
ELECTRONICS LETTERS | 2016年 / 52卷 / 14期
基金：
芬兰科学院;
关键词：
D O I：
10.1049/el.2016.0502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Voltage-controlled photoluminescence (PL) switching is demonstrated for single site-controlled InAs quantum dots (QDs) embedded in Schottky-i-n diodes grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs templates. The PL emission was quenched by applying a voltage over the diode structure due to the increased tunnelling rate of charge carriers out of the QDs.
引用
收藏
页码：1240 / 1241
页数：2
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