Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires

被引：65
|
作者：
Wallentin, Jesper [1 ]
Mergenthaler, Kilian
Ek, Martin [1 ]
Wallenberg, L. Reine [1 ]
Samuelson, Lars
Deppert, Knut
Pistol, Mats-Erik
Borgstrom, Magnus T.
机构：
[1] Lund Univ, Polymer & Mat Chem nCHREM, S-22100 Lund, Sweden
来源：
NANO LETTERS | 2011年 / 11卷 / 06期
基金：
瑞典研究理事会;
关键词：
Nanowire; MOVPE; photoluminescence; doping; wurtzite; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE;
D O I：
10.1021/nl200492g
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).
引用
收藏
页码：2286 / 2290
页数：5
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