Graphene-Based Normal/Ferromagnetic/Normal Junction as a Polarizer

被引：6

作者：

Rashidian, Z. ^{[1
]}

Kheirandish, F. ^{[1
]}

机构：

[1] Univ Isfahan, Dept Phys, Esfahan 81746, Iran

来源：

INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS | 2012年 / 51卷 / 07期

关键词：

Spin-transport; Graphene; Polarizer; Kronig-Penney model; Scattering matrix; NANORIBBONS;

D O I：

10.1007/s10773-012-1077-y

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scattering matrix formalism is employed to calculate the conductance in a graphene-based N/F/N/F/N junction in the ballistic regime. The manipulation of spin transport for any number of N/F junctions is investigated by both the electrode gate and magnetic barriers. Kronig-Penney model is applied to consider the effects of barriers on spin transport in graphene. By considering a sequence of N/F junctions we have proposed that N/F/N junction could act like a polarizer. In this way, unpolarized charge carriers while traversing through the consecutive N/F/N junctions turn into polarized charge carriers.

引用

收藏

页码：1989 / 1996

页数：8

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