Substrate effect on the resistive switching in BiFeO3 thin films

被引：23

作者：

Shuai, Yao ^{[1
,2
]}

Ou, Xin ^{[1
]}

Wu, Chuangui ^{[2
]}

Zhang, Wanli ^{[2
]}

Zhou, Shengqiang ^{[1
]}

Buerger, Danilo ^{[1
]}

Reuther, Helfried ^{[1
]}

Slesazeck, Stefan ^{[3
]}

Mikolajick, Thomas ^{[3
]}

Helm, Manfred ^{[1
]}

Schmidt, Heidemarie ^{[1
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] Namlab gGmbH, D-01187 Dresden, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期

关键词：

D O I：

10.1063/1.3672840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interfaces. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt/Ti/SiO2/Si substrates are discussed to understand the different resistive switching behaviors. (C) 2012 American Institute of Physics. [doi:10.1063/1.3672840]

引用

页数：3

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