Deep centers in a CuInGaSe2/CdS/ZnO:B solar cell

被引：21

作者：

Choi, In-Hwan ^{[1
]}

Choi, Chul-Hwan ^{[2
]}

Lee, Joo-Won ^{[2
]}

机构：

[1] Chung Ang Univ, Dept Phys, Seoul 156756, South Korea

[2] LG Innotek, Gyeonggi Do 426791, Ansan Si, South Korea

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 06期

关键词：

CIGS solar cells; deep centers; deep-level transient spectroscopy; electron-beam induced currents; ELECTRICAL-PROPERTIES;

D O I：

10.1002/pssa.201127596

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuInGaSe2(CIGS)/CdS/ZnO:B heterojunction solar cells and CIGS/Al Schottky junction diodes were fabricated, and the defect centers were examined by capacitancevoltage (CV) measurements and deep-level transient spectroscopy (DLTS). The homogeneity of the junction in the CIGS heterojunction solar cell was examined by electron-beam induced current (EBIC) measurements. The distribution of the defect concentrations in the CIGS absorber layer of the CIGS/CdS/ZnO:B heterojunction changed remarkably with depth. On the other hand, the defect distribution in the CIGS layer of the CIGS Schottky junction was quasi-homogeneous. One electron and one hole trap were observed from CIGS Schottky junction, whereas one electron trap and two hole traps were found in the CIGS/CdS/ZnO:B heterojunction.

引用

页码：1192 / 1197

页数：6

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