Optical Properties of TiO2 Thin Film Grown On Quartz Substrate by Sol-Gel Method

被引:0
作者
Tian, Jianjun [1 ]
Deng, Hongmei [2 ]
Sun, Lin [1 ]
Kong, Hui [1 ]
Yang, Pingxiong [1 ]
Chu, Junhao [1 ]
机构
[1] East China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
[2] Shanghai Univ, Lab Microstruct, Shanghai 200444, Peoples R China
来源
PHOTONICS AND OPTOLECTRONICS MEETINGS (POEM) 2011: OPTOELECTRONIC DEVICES AND INTEGRATION | 2011年 / 8333卷
基金
中国国家自然科学基金;
关键词
TiO2; films; rutile; Optical properties; ELECTRICAL-PROPERTIES; RUTILE TIO2(110); SINGLE-CRYSTALS; ANATASE TIO2; SURFACE; BULK; PHOTOLUMINESCENCE; ELLIPSOMETRY; CONDUCTIVITY;
D O I
10.1117/12.916849
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
TiO2 film was deposited on quartz substrate by sol-gel method. X-ray diffraction analysis and Raman scattering measurement indicate that the TiO2 film is the pure rutile phase structure. From photoluminescence spectra, it is found that the TiO2 film shows a near-infrared luminescence band centered at about 832 nm, and two visible luminescence bands centered at about 426 nm and 524 nm, respectively. The refractive index n, extinct coefficient k, optical band gap E-OBG and thickness d of TiO2 film were extracted by fitting transmission spectra with the Adachi's dielectric function model and a three-phase layered model. It is found that n value increases and then decreases with increasing wavelength, while k decreases continuously. The thickness of TiO2 film is about 297 nm. E-OBG value is about 3.72eV and larger than that attained by Tauc's law, which is about 3.28eV.
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页数:8
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