A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device

被引：14
|
作者：
Kang, Myounggon [1 ,2 ,3 ]
Hahn, Wookghee [3 ]
Park, Il Han [3 ]
Song, Youngsun [3 ]
Lee, Hocheol [3 ]
Choi, Kihwan [3 ]
Lim, Youngho [3 ]
Joe, Sung-Min [1 ,2 ]
Chae, Dong Hyuk [1 ,2 ,3 ]
Shin, Hyungcheol [1 ,2 ]
机构：
[1] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
[3] Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 10期
关键词：
INTERFERENCE;
D O I：
10.1143/JJAP.50.100204
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies. (C) 2011 The Japan Society of Applied Physics
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页数：2
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