A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device

被引：14

作者：

Kang, Myounggon ^{[1
,2
,3
]}

Hahn, Wookghee ^{[3
]}

Park, Il Han ^{[3
]}

Song, Youngsun ^{[3
]}

Lee, Hocheol ^{[3
]}

Choi, Kihwan ^{[3
]}

Lim, Youngho ^{[3
]}

Joe, Sung-Min ^{[1
,2
]}

Chae, Dong Hyuk ^{[1
,2
,3
]}

Shin, Hyungcheol ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, ISRC, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

[3] Samsung Elect Co Ltd, Flash Design Team, Memory Business, Hwasung 445701, Gyeonggi, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 10期

关键词：

INTERFERENCE;

D O I：

10.1143/JJAP.50.100204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies. (C) 2011 The Japan Society of Applied Physics

引用

页数：2

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