Transport in ultra-thin-body SOI and silicon nanowire MOSFETs

被引:0
|
作者
Hiramoto, Toshiro [1 ]
Tsutsui, Gen [1 ]
Shimizu, Ken [1 ]
Kobayashi, Masaharu [1 ]
机构
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:417 / 418
页数:2
相关论文
共 50 条
  • [1] Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
    Czornomaz, L.
    Daix, N.
    Kerber, P.
    Lister, K.
    Caimi, D.
    Rossel, C.
    Sousa, M.
    Uccelli, E.
    Fompeyrine, J.
    2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2013, : 143 - 146
  • [2] Nickel-silicide process for ultra-thin-body SOI-MOSFETs
    Schmidt, M
    Mollenhauer, T
    Gottlob, HDB
    Wahlbrink, T
    Efavi, JK
    Ottaviano, L
    Cristoloveanu, S
    Lemme, MC
    Kurz, H
    MICROELECTRONIC ENGINEERING, 2005, 82 (3-4) : 497 - 502
  • [3] Impact of surface roughness on silicon and germanium ultra-thin-body MOSFETs
    Low, T
    Li, MF
    Fan, WJ
    Ng, ST
    Yeo, YC
    Zhu, C
    Chin, A
    Chan, L
    Kwong, DL
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 151 - 154
  • [4] Molybdenum gate work function engineering for ultra-thin-body silicon-on-insulator (UTB SOI) MOSFETs
    Ha, Daewon
    Ranade, Pushkar
    Choi, Yang-Kyu
    Lee, Jeong-Soo
    King, Tsu-Jae
    Hu, Chenming
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (4 B): : 1979 - 1982
  • [5] An in-depth simulation study of Coulomb mobility in ultra-thin-body SOI MOSFETs
    Jimenez-Molinos, F.
    Roldan, J. B.
    Balaguer, M.
    Gamiz, F.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (05)
  • [6] Molybdenum gate work function engineering for ultra-thin-body silicon-on-insulator (UTB SOI) MOSFETs
    Ha, DW
    Ranade, P
    Choi, YK
    Lee, JS
    King, TJ
    Hu, CM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B): : 1979 - 1982
  • [7] Advanced Characterization Technique for the Extraction of Intrinsic Effective Mobility in Ultra-Thin-Body Strained SOI MOSFETs
    Seo, Myungsoo
    Bae, Hagyoul
    Jeon, Chang-Hoon
    Lee, Byung-Hyun
    Choi, Yang-Kyu
    2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2017,
  • [8] A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs
    He, J.
    Bian, W.
    Chen, Y.
    Wei, Y.
    Zhang, L.
    Zhang, J.
    Chan, M.
    MOLECULAR SIMULATION, 2008, 34 (01) : 63 - 71
  • [9] A carrier-based analytic model for undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs
    He, Jin
    Zhang, Xing
    Zhang, Ganggang
    Chan, Mansun
    Wang, Yangyuan
    ISQED 2006: PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2006, : 127 - +
  • [10] Transport study of ultra-thin SOI MOSFETs
    Naser, B
    Cho, KH
    Hwang, SW
    Bird, JP
    Ferry, DK
    Goodnick, SM
    Park, BG
    Ahn, D
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 39 - 43