Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels

We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (similar to 5 nm) channels. The transistors exhibit good I-on/I-off characteristics, along with fully controlled short-channel effects revealed by low drain-induced barrier lowering (similar to 10 mV/V) and near-ideal subthreshold swing (similar to 60 mV/dec). Although the N-MOSFET required dopant segregation to suppress the ambipolar behavior, excellent P-MOSFET characteristics could be achieved without the use of barrier modification techniques. We attribute this to the Schottky barrier thinning in a nanosized metal-semiconductor junction and superior gate electrostatic control in a GAA nanowire architecture.