Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layers

被引：15

作者：

Gandrothula, Srinivas ^{[1
]}

Kamikawa, Takeshi ^{[1
]}

Shapturenka, Pavel ^{[2
]}

Anderson, Ryan ^{[1
]}

Wong, Matthew ^{[1
]}

Zhang, Haojun ^{[3
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
,3
]}

Denbaars, Steven P. ^{[1
,3
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93016 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 14期

关键词：

LIGHT-EMITTING-DIODES; HIGH-EFFICIENCY; POLARIZATION;

D O I：

10.1063/5.0062032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated mu LEDs of mesa sizes 10 x 10 and 15 x 15 mu m(2) on native (20 (21) over bar) semipolar substrates and on epitaxial lateral overgrown (ELO) wings of the (2021) substrate. The ELO mu LEDs exhibited very low leakage current (less than 10(-10) A) under forward bias (V < 2V) and at reverse bias voltages, which was a reduction in several orders of magnitude when compared with planar mu LEDs under the same fabrication and sidewall passivation scheme. Electrical characterization revealed that the mesa sidewall is less damaged in plasma dry etching in the ELO mu LEDs due to a lower material defect density than the planar mu LEDs. Moreover, the ELO mu LEDs showed improved optical performance over the planar mu LEDs. Published under an exclusive license by AIP Publishing.

引用

页数：6

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