Two-band model for transport properties of silicon (111) MOSFET structures with high mobility

被引：3

作者：

Gold, A. ^{[1
]}

Fabie, L. ^{[1
]}

Dolgopolov, V. T. ^{[1
]}

机构：

[1] CEMES, F-31055 Toulouse, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 05期

关键词：

two-band model; mobility; silicon (111); magnetoresistance;

D O I：

10.1016/j.physe.2007.09.005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

For zero temperature we present theoretical results for the mobility of a two-dimensional electron gas on the surface of silicon (111) in the case of impurity scattering and compare with experiments. We use a two-band model (7K-model) for valley degeneracy g(v) = 2 and 4, which was proposed recently in the literature. A comparison between theory and recent experimental results shows reasonable agreement. Within the two-band model we predict the magnetoresistance in a parallel magnetic field and the Dingle temperatures of the two bands as function of the carrier density. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1351 / 1353

页数：3

共 16 条

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