Synthesis of hierarchical heterostructure of Si3N4/Si

Three-dimensional Si-based hierarchical heterostructures with the assistance of catalyst Fe have been synthesized by CVD process. It is found that the major stem wires are single-crystal line Si, and the side branches are single-crystalline Si3N4 nanowires. A plausible two-stage growth mechanism has been proposed for the formation of these uniquely stacked structures. Firstly, Si stems are formed via VS mechanism. Secondly, the catalyst Fe deposited onto the surfaces of the stem and then serves as the nucleate and growth sites for the formation of Si3N4 nanowires. The photo luminescence (PL) spectrum of the product shows a strong blue light emission centered at 413 nm with a shoulder at 440 nm under excitation at 360 nm. (c) 2007 Elsevier B.V. All rights reserved.