Plasma treatment of HfO2-based metal-insulator-metal resistive memories

被引：10
作者：
Vallee, C. [1 ]
Gonon, P. [1 ]
Mannequin, C. [1 ]
Chevolleau, T. [1 ]
Bonvalot, M. [1 ]
Grampeix, H. [2 ]
Licitra, C. [2 ]
Rochat, N. [2 ]
Jousseaume, V. [2 ]
机构：
[1] UJF, CNRS, UMR 5129, LTM, F-38054 Grenoble 9, France
[2] CEA LETI Minatec, F-38054 Grenoble, France
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2011年 / 29卷 / 04期
关键词：
LAYER; MECHANISMS; DIFFUSION; HFO2;
D O I：
10.1116/1.3599825
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This work focuses on Au/HfO2/TiN nonvolatile resistive memory [ resistive random access memories (RRAMs)] stacks, where HfO2 is deposited by the atomic layer deposition technique on TiN electrodes. For as-grown RRAMs, no Reset is observed (the structure remains locked in a low resistive state). It is observed that an NH3 plasma treatment of the HfO2/TiN bilayer can restore a Reset stage. X-ray photoelectron spectroscopy analyses showed that the Reset recovery is related to a modification of the HfO2/TiN interface via transformation of the TiON interfacial layer. Thus, postdeposition plasma treatments of the oxide/ electrode interface are identified as a valuable tool to improve the switching properties of oxide-based RRAMs. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3599825]
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页数：6
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