Plasma treatment of HfO2-based metal-insulator-metal resistive memories

被引：10

作者：

Vallee, C. ^{[1
]}

Gonon, P. ^{[1
]}

Mannequin, C. ^{[1
]}

Chevolleau, T. ^{[1
]}

Bonvalot, M. ^{[1
]}

Grampeix, H. ^{[2
]}

Licitra, C. ^{[2
]}

Rochat, N. ^{[2
]}

Jousseaume, V. ^{[2
]}

机构：

[1] UJF, CNRS, UMR 5129, LTM, F-38054 Grenoble 9, France

[2] CEA LETI Minatec, F-38054 Grenoble, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2011年 / 29卷 / 04期

关键词：

LAYER; MECHANISMS; DIFFUSION; HFO2;

D O I：

10.1116/1.3599825

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work focuses on Au/HfO2/TiN nonvolatile resistive memory [ resistive random access memories (RRAMs)] stacks, where HfO2 is deposited by the atomic layer deposition technique on TiN electrodes. For as-grown RRAMs, no Reset is observed (the structure remains locked in a low resistive state). It is observed that an NH3 plasma treatment of the HfO2/TiN bilayer can restore a Reset stage. X-ray photoelectron spectroscopy analyses showed that the Reset recovery is related to a modification of the HfO2/TiN interface via transformation of the TiON interfacial layer. Thus, postdeposition plasma treatments of the oxide/ electrode interface are identified as a valuable tool to improve the switching properties of oxide-based RRAMs. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3599825]

引用

收藏

页数：6

相关论文

共 50 条

[21] Metal-insulator-metal strip spectroscopic infrared photothermal absorber based on uniaxially oriented plasmonic lanthanum hexaboride films [J].

Phuoc Toan Tran ;

Thien Duc Ngo ;

Ngo, Hai Dang ;

Handegard, Orjan Sele ;

Nagao, Tadaaki .

OPTICS EXPRESS, 2022, 30 (21) :38630-38642

[22] Tunable ultra-narrowband terahertz perfect absorber by using metal-insulator-metal microstructures [J].

Xu, Ruijia ;

Liu, Xiaoyan ;

Lin, Yu-Sheng .

RESULTS IN PHYSICS, 2019, 13

[23] Performance enhancement of HfO2-based resistive random-access memory devices using ZnO nanoparticles [J].

Byun, Jun-Ho ;

Ko, Woon-San ;

Kim, Ki-Nam ;

Lee, Do-Yeon ;

Kwon, So-Yeon ;

Lee, Hi-Deok ;

Lee, Ga-Won .

NANOTECHNOLOGY, 2023, 34 (39)

[24] Perspective on the switching behavior of HfO2-based ferroelectrics [J].

Wang, Chenxi ;

Qiao, Huimin ;

Kim, Yunseok .

JOURNAL OF APPLIED PHYSICS, 2021, 129 (01)

[25] Tuning the metal filling fraction in metal-insulator-metal ultra-broadband perfect absorbers to maximize the absorption bandwidth [J].

Ghobadi, Amir ;

Hajian, Hodjat ;

Rashed, Alireza Rahimi ;

Butun, Bayram ;

Ozbay, Ekmel .

PHOTONICS RESEARCH, 2018, 6 (03) :168-176

[26] Fabry-Perot Resonances in Planar Metal-Insulator-Metal Structures for Optical Data Processing: A Review [J].

Nesterenko, D. V. ;

Hayashi, S. ;

Soifer, V. .

PHYSICS OF WAVE PHENOMENA, 2023, 31 (05) :293-311

[27] High stability and reliability additively manufactured metal-insulator-metal capacitors for high-temperature applications [J].

Alshatnawi, Firas ;

Enakerakpo, Emuobosan ;

Alhendi, Mohammed ;

Abdelatty, Mohamed ;

Umar, Ashraf ;

Al-Haidari, Riadh ;

Shaddock, David ;

Hoel, Cathleen ;

Boyd, Linda ;

Poliks, Mark ;

Borgesen, Peter .

MATERIALS TODAY COMMUNICATIONS, 2024, 39

[28] Interface engineered HfO2-based 3D vertical ReRAM [J].

Hudec, Boris ;

Wang, I-Ting ;

Lai, Wei-Li ;

Chang, Che-Chia ;

Jancovic, Peter ;

Frohlich, Karol ;

Micusik, Matej ;

Omastova, Maria ;

Hou, Tuo-Hung .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (21)

[29] Atomistic Insights on the Full Operation Cycle of a HfO2-Based Resistive Random Access Memory Cell from Molecular Dynamics [J].

Laura Urquiza, M. ;

Islam, Md Mahbubul ;

van Duin, Adri C. T. ;

Cartoixa, Xavier ;

Strachan, Alejandro .

ACS NANO, 2021, 15 (08) :12945-12954

[30] Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications [J].

Khan, Sobia Ali ;

Kim, Sungjun .

RSC ADVANCES, 2020, 10 (52) :31342-31347

← 1 2 3 4 5 →