A Low Phase Noise Tri-band LO Generation for Ku and E Band Radios for Backhauling Point-to-Point Applications

被引:0
作者
Cabrera, D. [1 ]
Begueret, J. B. [1 ]
Verrascina, N. [1 ]
Tesson, O. [2 ]
Mazouffre, O. [1 ]
Gamand, P. [2 ]
机构
[1] Univ Bordeaux, IMS Lab, Bordeaux, France
[2] NXP Semicond, Caen, France
来源
2016 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2016年
关键词
phase noise; multiband millimeter wave frequency generation; subharmonic VCO; frequency tripler; injection locking; WIDE TUNING RANGE; VCO;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper demonstrates a fully integrated triband LO generation system based a low phase noise 12 GHz sub-harmonic VCO and an injection locked frequency tripler (ILFT) as the signal source. The system generates simultaneously three outputs at fo, fo/2 and 2xfo, with maximum frequency of 36 GHz, 18 GHz and 72 GHz respectively. The system which is implemented in a 0.25-mu m SiGe:C BiCMOS technology, has a phase noise of -107.72 dBc/Hz at 1 MHz offset from the 36 GHz signal measured at the fo-port. All outputs have a tuning range of 9.5%. The in-band output power at the fo, fo/2 and 2xfo outputs is higher than 3 dBm, 0 dBm and -20 dBm respectively. The whole system draws 120 rnA for a power supply of 2.5 V.
引用
收藏
页码:56 / 59
页数:4
相关论文
共 16 条
[1]  
[Anonymous], 2003, 101854 ETSI TR
[2]  
Cabrera D, 2014, IEEE BIPOL BICMOS, P183, DOI 10.1109/BCTM.2014.6981310
[3]  
JUNG DY, 2008, ELECTRON LETT, V44, P630
[4]   A 64-84-GHz PLL With Low Phase Noise in an 80-GHz SiGe HBT Technology [J].
Liu, Gang ;
Trasser, Andreas ;
Schumacher, Hermann .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (12) :3739-3748
[5]   High Power Terahertz and Millimeter-Wave Oscillator Design: A Systematic Approach [J].
Momeni, Omeed ;
Afshari, Ehsan .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2011, 46 (03) :583-597
[6]   A Push-Push VCO With 13.9-GHz Wide Tuning Range Using Loop-Ground Transmission Line for Full-Band 60-GHz Transceiver [J].
Nakamura, Takahiro ;
Masuda, Toru ;
Washio, Katsuyoshi ;
Kondoh, Hiroshi .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (06) :1267-1277
[7]   SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency [J].
Pohl, Nils ;
Rein, Hans-Martin ;
Musch, Thomas ;
Aufinger, Klaus ;
Hausner, Josef .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (10) :2655-2662
[8]   Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s [J].
Rein, HM ;
Moller, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (08) :1076-1090
[9]  
Tomkins A., 2012, Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE, P1
[10]  
van der Heijden E., 2008, 2008 IEEE Radio Frequency Integrated Circuits Symposium, P653, DOI 10.1109/RFIC.2008.4561522