Field emission properties of single-walled carbon nanotubes with a variety of emitter morphologies

被引：17

作者：

Shiratori, Yosuke ^{[1
]}

Furuichi, Koji ^{[2
]}

Noda, Suguru ^{[1
]}

Sugime, Hisashi ^{[1
]}

Tsuji, Yoshiko ^{[1
]}

Zhang, Zhengyi ^{[3
]}

Maruyama, Shigeo ^{[3
]}

Yamaguchi, Yukio ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Dainippon Screen MFG Co Ltd, Kamigyo Ku, Kyoto 6028585, Japan

[3] Univ Tokyo, Sch Engn, Dept Mech Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 06期

关键词：

single-walled carbon nanotube; field emission; alcohol catalytic chemical vapor deposition; ethanol; textured Si; Raman spectroscopy;

D O I：

10.1143/JJAP.47.4780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field emission properties of single-walled carbon nanotubes (SWCNTs), which were prepared through alcohol catalytic chemical vapor deposition for 10-60s, were characterized in a diode configuration. Protrusive bundles at the top surface of samples act selectively as emission sites. The number of emission sites was controlled by emitter morphologies combined with texturing of Si substrates. SWCNTs grown on a textured Si substrate exhibited a turn-on field as low as 2.4 V/mu m at a field emission current density of 1 mu A/cm(2). Uniform spatial luminescence (0.5 cm(2)) from the rear surface of the anode was revealed for SWCNTs prepared on the textured Si substrate. Deterioration of field emission properties through repetitive measurements was reduced for the textured samples in comparison with vertically aligned SWCNTs and a random network of SWCNTs prepared on flat Si substrates. Emitter morphology resulting in improved field emission properties is a crucial factor for the fabrication of SWCNT-electron sources. Morphologically controlled SWCNTs with promising emitter performance are expected to be practical electron sources.

引用

页码：4780 / 4787

页数：8

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