Crossover critical behavior of Ga1-xMnxAs

被引：5

作者：

Yuldashev, Sh U. ^{[1
]}

Igamberdiev, Kh T. ^{[1
]}

Kwon, Y. H. ^{[1
]}

Lee, Sanghoon ^{[2
]}

Liu, X. ^{[3
]}

Furdyna, J. K. ^{[3
]}

Shashkov, A. G. ^{[4
]}

Kang, T. W. ^{[1
]}

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Korea Univ, Dept Phys, Seoul 136701, South Korea

[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[4] Inst Heat & Mass Transfer, Minsk 220072, BELARUS

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 12期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

FERROMAGNETISM; MODEL;

D O I：

10.1103/PhysRevB.85.125202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The critical behavior of the ferromagnetic semiconductor Ga1-xMnxAs with different concentrations of Mn was experimentally studied by thermal diffusivity measurements in close vicinity of the Curie temperature. Because the inverse of the thermal diffusivity has the same critical behavior as the specific heat, this allowed us to determine the critical exponent alpha for the samples investigated. As the critical temperature was approached, the value of the critical exponent alpha, for most of the samples under investigation, showed a clear crossover from the mean-field-like to the Ising-like critical behavior. Investigation of this crossover behavior has enabled us to determine the values of the Ginzburg number and the exchange interaction length in Ga1-xMnxAs.

引用

页数：6

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