High-to-Low Flippling (HLF) Coding Strategy in Triple-levell-cell (TLC) 3D NAND Flash Memory to Construct Reliable Image Storages

被引：1

作者：

Chen, Binglu ^{[1
]}

Kong, Yachen ^{[1
]}

Sun, Zhaohui ^{[1
]}

Fang, Xiaotong ^{[1
]}

Zhan, Xuepeng ^{[1
]}

Chen, Jiezhi ^{[1
]}

机构：

[1] Shandong Univ, Sch Informat Sci & Engn, Qingdao, Peoples R China

来源：

6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022) | 2022年

基金：

中国国家自然科学基金;

关键词：

3D NAND flash; image storage; BER; data retention;

D O I：

10.1109/EDTM53872.2022.9798237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to construct highly reliable image storages with triple-level-cell (TLC) 3D charge-trap NAND flash memory, the image coding strategy is optimized by taking the memory properties into account. Firstly, error bits at different program states are studied on the NAND chip tester, and then we propose a high-to-low flipping (HLF) coding scheme to suppress bit-error-rate (BER). It is found that the HLF coding scheme can effectively suppress BER during the long-time retention, which is important to prolong the lifetime of image storages. Specially, in the fresh block, BER is reduced to x63.9% similar to 44.9%; while in the 2000 PE cycled block, BER can be reduced to x34.9% similar to 15.6%.

引用

页码：336 / 338

页数：3

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