Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation

被引:48
作者
Zhang, Zhaofu [1 ]
Huang, Bingquan [2 ]
Qian, Qingkai [3 ]
Gao, Zhibin [4 ]
Tang, Xi [2 ]
Li, Baikui [2 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
[3] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[4] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore
基金
中国国家自然科学基金;
关键词
GALLIUM NITRIDE; GAN; SEMICONDUCTORS; MECHANISM; DEVICES; SI;
D O I
10.1063/5.0005648
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Solar to fuel energy conversion is one of the momentous topics nowadays considering the urgent demand for clean energy supplies. In this work, the tunable electronic and optical properties of III-nitride/ZnO 2D/2D heterostructures (including GaN/ZnO, AlN/ZnO, and GaN/AlN) by strain engineering were investigated by first-principles calculations. The studied heterostructures feature a small interlayer distance, with the cation of one layer directly above the anion of the other layer, and vice versa. This leads to a strong binding energy and interlayer coupling across the heterostructure. The built-in field induced by the charge redistribution facilitates the photoexcited carrier migration, which is beneficial to the photocatalytic water splitting application. The stable III-nitride/ZnO heterostructures exhibit decent band edge positions with biaxial strain engineering and feature an enhancement of optical absorption under tensile strain. Our results indicate that the III-nitride/ZnO 2D/2D heterostructures are promising photocatalysts for solar to hydrogen generation by water splitting.
引用
收藏
页数:8
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