Direct extraction of equivalent circuit parameters for balun on silicon substrate

被引：2

作者：

Xiong, YZ ^{[1
]}

Teo, TH

Fu, JS

机构：

[1] Inst Microelect, Integrated Circuit & Syst Lab, Singapore 117685, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 08期

关键词：

balun; CMOS; direct extraction; equivalent circuit;

D O I：

10.1109/TED.2005.851851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A direct extraction technique of equivalent circuit parameters for three-port balun on silicon substrate is developed. The extraction is based on two-port measurement instead of three-port by grounding the third port. This technique greatly simplified the measurement and extraction process. The extracted results are in excellent agreement with the measured results up to 10 GHz.

引用

页码：1915 / 1917

页数：3

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